Samsung Electronics recently began sampling its latest high bandwidth memory (HBM) units among selected customers. This chip is asserted to help maximise computing performance for large language models (LLMs) and next-generation AI systems.
Claiming an industry first with the 12-layer HBM4E unit, the company noted the release followed mass production and commercial shipment of its HBM4 earlier this year.
The latest release is said to achieve transfer speeds of up to 16Gb/s with improved energy efficiency and thermal performance.
Samsung head of memory development Sang Joon Hwang said the company had “once again demonstrated its distinct technological edge with HBM4E”.
“Through our advanced manufacturing capabilities and pre-emptive infrastructure investments, we will continue to drive the growth of the global AI memory market”.
Samsung noted the chip “delivers a stable pin speed of 14Gb/s”, a 20% increase over the HBM4. The rate of the latest product can be scaled up to 16Gb/s “to support increasingly intensive data processing requirements,” it added.
The company added its “comprehensive portfolio spanning memory, foundry, logic design and advanced packaging” meant it would be able to “continue to ensure a stable semiconductor supply for the booming AI market”.
Along with peers, Samsung has been reaping the rewards of high demand and associated price rises for memory chips driven by global demand for AI systems.
Samsung booked record quarterly sales for its memory business in Q1, attributed to addressing “high-value-added AI demand despite limited supply availability”.
Source: Mobile World Live
Image Credit: Samsung
